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H55S1G32MFP-75 参数 Datasheet PDF下载

H55S1G32MFP-75图片预览
型号: H55S1G32MFP-75
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB ( 32Mx32bit )移动SDRAM [1Gb (32Mx32bit) Mobile SDRAM]
分类和应用: 动态存储器
文件页数/大小: 53 页 / 908 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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11  
1Gbit (32Mx32bit) Mobile SDR Memory  
H55S1G(2/3)2MFP Series  
WRITE to WRITE  
Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either case,  
a continuous flow of input data, can be maintained. The new WRITE command can be issued on any positive edge of  
the clock following the previous WRITE command. The first data-in element from the new burst is applied after either  
the last element of a completed burst or the last desired data element of a longer burst which is being truncated. The  
new WRITE command should be issued X cycles after the first WRITE command, where X equals the number of  
desired data-in element.  
CLK  
Command  
WRITE  
WRITE  
BA, Col  
b
BA, Col  
n
Address  
DQ  
DIb1  
DIn0  
DIb0  
DIn1  
DIb2 DIb3  
D
I
n2  
DIn3  
DM  
CL = 2 or 3  
Don't Care  
Concatenated Write Bursts  
CLK  
Command  
WRITE  
WRITE  
WRITE  
WRITE  
WRITE  
NOP  
BA, Col  
b
BA, Col  
x
BA, Col  
n
BA, Col  
a
BA, Col  
g
Address  
DQ  
D
I
b'  
DIn  
DIb  
DIn  
D
I
x
D
I
a
DIg  
D
I
x  
DIa  
D
I
g  
DM  
Don't Care  
CL = 2 or 3  
Random Write Cycles  
Rev 1.2 / Jun. 2008  
35  
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