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H55S1G32MFP-75 参数 Datasheet PDF下载

H55S1G32MFP-75图片预览
型号: H55S1G32MFP-75
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB ( 32Mx32bit )移动SDRAM [1Gb (32Mx32bit) Mobile SDRAM]
分类和应用: 动态存储器
文件页数/大小: 53 页 / 908 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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11  
1Gbit (32Mx32bit) Mobile SDR Memory  
H55S1G(2/3)2MFP Series  
READ to PRECHARGE  
Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met.  
Note that part of the row precharge time is hidden during the access of the last data element(s).  
In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time  
(as described above) provides the same operation that would result from the same fixed-length burst with auto pre-  
charge.  
The disadvantage of the PRECHARGEcommand is that it requires that the command and address buses be available at  
the appropriate time to issue the command; the advantage of the PRECHARGE command is that it can be used to trun-  
cate fixed-length or full-page bursts.  
CLK  
Command  
Address  
READ  
PRE  
ACT  
tRP  
Bank  
A, All  
BA, Col  
n
BA,  
Row  
CL =2  
CL =3  
DQ  
DQ  
Don  
Don  
Don't Care  
1) DO n = Data Out from column n  
2) Note that Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks.  
3) The ACTIVE command may be applied if tRC has been met.  
READ to PRECHARGE  
Rev 1.2 / Jun. 2008  
33  
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