11
1Gbit (32Mx32bit) Mobile SDR Memory
H55S1G(2/3)2MFP Series
READ to WRITE
Data from READ burst must be completed or truncated before a subsequent WRITE command can be issued. If trun-
cation is necessary, the BURST TERMINATE command must be used, as shown in next fig.
CLK
Command
Address
READ
BURST
WRITE
BA, Col
n
BA, Col
b
CL =2
CL =3
DQ
DQ
Don
Don'
Don
DIb0
DIb3
DIb3
DIb1
DIb2
Don'
DIb0
D
I
b1
DIb2
Don't Care
1) DO n = Data Out from column n; DI b = Data In to column b
Read to Write
Notes :
1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same bank as
the preceding read command, the write command can be performed after an interval of no less than 1 clock.
However, DQM must be set High so that the output buffer becomes High-Z before data input.
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed;
it is necessary to separate the two commands with a precharge command and a bank active command.
3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1 cycle, provided
that the other bank is in the bank active state. However, DQM must be set High so that the output buffer becomes High-Z before
data input.
Rev 1.2 / Jun. 2008
32
HYNIX [ HYNIX SEMICONDUCTOR ]
