欢迎访问ic37.com |
会员登录 免费注册
发布采购

H27U4G8F2DTR-BC 参数 Datasheet PDF下载

H27U4G8F2DTR-BC图片预览
型号: H27U4G8F2DTR-BC
PDF下载: 下载PDF文件 查看货源
内容描述: 4千兆( 512M ×8位)NAND闪存 [4 Gbit (512M x 8 bit) NAND Flash]
分类和应用: 闪存
文件页数/大小: 62 页 / 1015 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
 浏览型号H27U4G8F2DTR-BC的Datasheet PDF文件第44页浏览型号H27U4G8F2DTR-BC的Datasheet PDF文件第45页浏览型号H27U4G8F2DTR-BC的Datasheet PDF文件第46页浏览型号H27U4G8F2DTR-BC的Datasheet PDF文件第47页浏览型号H27U4G8F2DTR-BC的Datasheet PDF文件第49页浏览型号H27U4G8F2DTR-BC的Datasheet PDF文件第50页浏览型号H27U4G8F2DTR-BC的Datasheet PDF文件第51页浏览型号H27U4G8F2DTR-BC的Datasheet PDF文件第52页  
APCPCWM_4828539:WP_0000001WP_0000001  
1
H27(U_S)4G8_6F2D  
4 Gbit (512M x 8 bit) NAND Flash  
Read ID Operation  
CLE  
CE  
WE  
tAR  
ALE  
RE  
tREA  
Device  
code  
3rd cyc.  
ADh  
4th cyc.  
5th cyc.  
90h  
00h  
I/Ox  
Read ID Command  
Maker Code  
Deꢃice Code  
Address 1 Cꢂcꢄe  
Figure 27: ID Read  
CLE  
WE  
ALE  
RE  
IO0~7  
90h  
49h  
Figure 28: ONFI signature timing diagram  
Rev 1.4 / OCT. 2010  
48  
B34416/177.179.157.84/2010-10-08 10:08  
*ba53f20d-240c*  
 复制成功!