APCPCWM_4828539:WP_0000001WP_0000001
1
H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
Rp
1.8V device - VOL : 0.1V. VOH : VCC-0.1V
2.7V device - VOL : 0.4V. VOH : VCCQ-0.4V
3.3V device - VOL : 0.4V. VOH : 2.4V
ibusy
Vcc
Ready
VCC
R/B
open drain output
VOL : 0.4V, VOH : 2.4V
VOH
C
L
VOL
Busy
tf
tr
GND
Device
Rp vs tr, tf & Rp vs ibusy
@ ꢀcc = ±ꢈ7ꢀ, Ta = ±5°C, C
L
=32pF
@ ꢀcc = 3ꢈ3ꢀ, Ta = ±5°C, C
L
=52pF
@ ꢀcc = 1ꢈ8ꢀ, Ta = ±5°C, C
L
=32pF
ibusy [A]
ibusy [A]
3m
ibusy [A]
2.4
200
ibusy
300n
3m
2m
1m
3m 300n
300n
200n
2.3
150
1.2
ibusy
ibusy
1.70
200n
100n
200n
2m
2m
1m
1.1
100
120
0.85
0.8
90
0.57
120
tr
90
tr
60
50
30
60
tr
30
1m 100n
tr,tf [c]
100n
0.75
2.3
0.43
0.6
1.8
0.55
2.3
2.3
2K
1.8
1K
1.8
2K
1.8
1.70
1.70
1.70
tf
tf
2.3
4K
tf
1.70
tr,tf [c]
tr,tf [c]
1K
3K
3K
4K
1K
2K
3K
4K
Rp(ohm)
Rp(ohm)
Rp(ohm)
Rp value guidence
Vcc (Max.) - VOL (Max.)
1.85V
Rp (min. 1.8V part) =
=
=
=
1.8V version
3.0V version
,OL + ,
L
ꢄP$ꢃꢅꢃ,
L
Vcc (Max.) - VOL (Max.)
2.5V
Rp (min. 2.7V part) =
,OL + ,
L
ꢄP$ꢃꢅꢃ,
3.2V
L
L
Vcc (Max.) - VOL (Max.)
Rp (min. 3.3V part) =
,
OL + ,
L
ꢆP$ꢃꢅꢃ,
ꢆꢇere IL is tꢇe sum oꢁ tꢇe input currnts oꢁ aꢄꢄ deꢃices tied to tꢇe R/B pinꢈ
Rp(max) is determined bꢂ maximum permissibꢄe ꢄimit oꢁ tr
Figure 34: Ready/Busy Pin electrical application
Rev 1.4 / OCT. 2010
52
B34416/177.179.157.84/2010-10-08 10:08
*ba53f20d-240c*
HYNIX [ HYNIX SEMICONDUCTOR ]
