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H27U4G8F2DTR-BC 参数 Datasheet PDF下载

H27U4G8F2DTR-BC图片预览
型号: H27U4G8F2DTR-BC
PDF下载: 下载PDF文件 查看货源
内容描述: 4千兆( 512M ×8位)NAND闪存 [4 Gbit (512M x 8 bit) NAND Flash]
分类和应用: 闪存
文件页数/大小: 62 页 / 1015 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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PCWM_4828539:WP_0000001WP_0000001  
1
H27(U_S)4G8_6F2D  
4 Gbit (512M x 8 bit) NAND Flash  
Program cache timing mode support  
H27U4G8F2DKA-BM:1Fh, 00h  
H27S4G8F2DKA-BM:03h, 00h  
H27S4G6F2DKA-BM:03h, 00h  
H27U4G8F2DTR-BC:1Fh, 00h  
H27U4G8F2DTR-BI:1Fh, 00h  
H27U8G8G5DTR-BC:1Fh, 00h  
H27U8G8G5DTR-BI:1Fh, 00h  
6-1  
5Reserved (0)  
5
4
3
2
1
0
1 = supports timing mode 5  
1 = supports timing mode 4  
1 = supports timing mode 3  
1 = supports timing mode 2  
1 = supports timing mode 1  
1 = supports timing mode 0,  
131-132  
O
tPROG Maximum page program time ()  
tBERS Maximum block erase time ()  
tR Maximum page read time ()  
tccs Minimum Change Column setup time (ns)  
Reserved (0)  
133-134  
135-136  
137-138  
M
M
M
M
BCh, 02h  
0Ah, 00h  
19h, 00h  
139-140  
141-163  
64h, 00h  
00h  
Vendor block  
164-165  
166-253  
M
M
Vendor specific Revision number  
Vendor specific  
00h  
8F2DKA-BM:48h, F6h  
8F2DKA-BM:9Bh, CEh  
6F2DKA-BM:54h, 61h  
8F2DTR-BC:1Fh, EDh  
8F2DTR-BI:5Bh, 14h  
8G5DTR-BC:FCh, C1h  
8G5DTR-BI:B8h, 38h  
254-255  
Integrita CRC  
256-511  
512-767  
768+  
M
M
O
Value of bytes 0-255  
lue of bytes 0-255  
lue of bytes 0-255  
Value of bytes 0-255  
Additional redundant p
NOTE: “O” Stands for Optional, “M” for Mandatory  
Rev 1.4 / OCT. 2010  
29  
B34416/177.179.157.84/2010-10-08 10:08  
*ba53f20d-240c*  
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