APCPCWM_4828539:WP_0000001WP_0000001
1
H27(U_S)4G8_6F2D
4 Gbit (512M x 8 bit) NAND Flash
3rd ID Data
Description
I/O7
I/O6
I/O5 I/O4
I/O3 I/O2
I/O1 I/O0
1
2
4
8
0
0
1
1
0
1
0
1
Internal Chip Number
Cell Type
2 Level Cell
4 Level Cell
8 Level Cell
16 Level Cell
0
0
1
1
0
1
0
1
1
2
4
8
0
0
1
1
0
1
0
1
Number of
Simultaneously
Programmed Pages
Interleave Program
Between multiple chips
Not Support
Support
0
1
Not Support
Support
0
1
Cache Program
Table 16: Legacy Read ID 3rd byte description
4
th ID Data
Description
I/O7
I/O6
I/O5 I/O4
I/O3
I/O2
I/O1 I/O0
1KB
2KB
4KB
8KB
0
0
1
1
0
1
0
1
Page Size
(w/o redundant area)
64KB
0
0
1
1
0
1
0
1
Block Size
(w/o redundant area)
128KB
256KB
512KB
Redundant Area Size
(byte/512byte)
8
16
0
1
X8
X16
0
1
Organization
50ns/30ns
25ns
Reserved
Reserved
0
1
0
1
0
0
1
1
Serial Access Minimum
Table 17: Legacy Read ID 4th byte description
Rev 1.4 / OCT. 2010
25
B34416/177.179.157.84/2010-10-08 10:08
*ba53f20d-240c*
HYNIX [ HYNIX SEMICONDUCTOR ]
