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HX6228ABHT 参数 Datasheet PDF下载

HX6228ABHT图片预览
型号: HX6228ABHT
PDF下载: 下载PDF文件 查看货源
内容描述: 128K x 8静态RAM - SOI HX6228 [128K x 8 STATIC RAM-SOI HX6228]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 12 页 / 153 K
品牌: HONEYWELL [ Honeywell ]
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HX6228  
DYNAMIC BURN-IN DIAGRAM*  
STATIC BURN-IN DIAGRAM*  
VDD  
VDD  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
1
2
VDD  
A15  
CE  
NWE  
A13  
A8  
NC  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
VSS  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
1
2
NC  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
VSS  
NC  
VDD  
A15  
CE  
NWE  
A13  
A8  
R
R
F18  
F19  
F0  
F15  
F12  
F11  
F10  
F19  
F9  
F19  
F1  
F1  
F1  
F1  
R
R
R
R
R
F17  
F16  
F7  
F6  
F5  
F4  
F3  
F2  
F8  
F13  
F14  
F1  
F1  
F1  
R
3
R
R
R
R
3
R
R
R
R
4
R
R
R
R
4
5
5
6
6
R
R
R
R
7
A9  
7
R
R
R
R
R
A9  
8
A11  
NOE  
A10  
NCS  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
R
R
8
A11  
NOE  
A10  
NCS  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
9
9
R
R
10  
11  
12  
13  
14  
15  
16  
10  
11  
12  
13  
14  
15  
16  
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
F1  
VDD = 5.6V, R 10 K, VIH = VDD, VIL = VSS  
Ambient Temperature 125 °C, F0 100 KHz Sq Wave  
Frequency of F1 = F0/2, F2 = F0/4, F3 = F0/8, etc.  
VDD = 5.5V, R 10 KΩ  
Ambient Temperature 125 °C  
*40-Lead Flat Pack burn-in diagrams have similar connections and are available upon request.  
ORDERING INFORMATION (1)  
6228  
H
X
T
S
C
R
SCREEN LEVEL  
V=QML Class V  
Q=QML Class Q  
S=Level S  
B=Level B  
E=Engr Device (2)  
PART NUMBER  
PROCESS  
X=SOI  
TOTAL DOSE  
HARDNESS  
SOURCE  
H=HONEYWELL  
PACKAGE DESIGNATION  
T=32-Lead FP  
A=40-Lead FP  
K=Known Good Die  
- =Bare die (No Package)  
INPUT  
BUFFER TYPE  
C=CMOS Level  
T=TTL Level  
R=1x105 rad(SiO2)  
F=3x105 rad(SiO2)  
H=1x106 rad(SiO2)  
N=No Level Guaranteed  
(1) Orders may be faxed to 612-954-2051. For technical assistance, contact our Customer Logistics Department at 612-954-2888.  
(2) Engineering Device description: Parameters are tested from -55 to 125°C, 24 hr burn-in, IDDSB = 10mA, no radiation guaranteed.  
Contact Factory with other needs.  
To lea r n m or e a bou t Hon eyw ell Solid Sta te Electr on ics Cen ter ,  
visit ou r w eb site a t h ttp ://w w w .ssec.h on eyw ell.com  
Honeywell reserves the right to make changes to any products or technology herein to improve reliability, function or design. Honeywell does not assume any liability  
arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others.  
Helping You Control Your World  
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