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HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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19.4.6 Erasing Flowchart and Sample Program  
Flowchart for Erasing One Block  
Start  
Set erase block register  
(set bit of block to be erased to 1)  
Write 0 data in all addresses  
to be erased (prewrite)*1  
n = 1  
Enable watchdog timer*2  
Notes: *1 Program all addresses to be  
erased by following the prewrite  
flowchart.  
Select erase mode  
(E bit = 1 in FLMCR)  
*2 Set the watchdog timer overflow  
interval to the value indicated in  
table 19.10.  
Wait (x) ms*5  
*3 For the erase-verify dummy write,  
write H'FF with a byte transfer  
instruction.  
Erasing ends  
Clear E bit  
*4 Read the data to be verified with  
a byte transfer instruction. When  
erasing two or more blocks, clear  
the bits of erased blocks in the  
erase block registers, so that only  
unerased blocks will be erased  
again.  
Disable watchdog timer  
Set top address in block  
as verify address  
Select erase-verify mode  
(EV bit = 1 in FLMCR)  
*5 x:  
10 ms  
t
t
N:  
VS1: 4 µs or more  
VS2: 2 µs or more  
Wait (tVS1) µs*5  
3000  
Dummy write to verify address*3  
(flash memory latches address)  
Wait (tVS2) µs*5  
No go  
Verify*4 (read data H'FF?)  
OK  
Erase-verify ends  
No  
Clear EV bit  
No  
Last address?  
n N?*5  
Address + 1 address  
Yes  
n + 1 n  
Clear EV bit  
Yes  
Clear erase block register  
(clear bit of erased block to 0)  
Erase error  
End of block erase  
Figure 19.9 Erasing Flowchart  
399  
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