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HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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Sample Block-Erase Program: This program uses the following registers.  
R0: Specifies block to be erased, and also stores address used in prewrite and erase-verify.  
R1H: Stores data to be read, and also used for dummy write.  
R2: Stores last address of block to be erased.  
R3: Stores address used in prewrite and erase-verify.  
R4: Sets timing loop counters for prewrite, prewrite-verify, erase, and erase-verify, and also  
stores register setting value.  
R5: Sets prewrite and erase timing loop counters.  
R6L: Used for prewrite-verify and erase-verify fail count.  
The setting of #a, #b, #c, #d, and #e values in the program depends on the clock frequency. Set #a,  
#b, #c, #d, and #e values according tables 19.9 (1) and (2), and 19.10. Erase block registers (EBR1  
and EBR2) should be set according to sections 19.2.2 and 19.2.3. #BLKSTR and #BLKEND are  
the top and last addresses of the block to be erased. Set #BLKSTR and #BLKEND according to  
figure 19.2.  
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