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HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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19.4.2 Program-Verify Mode  
In program-verify mode, after data has been programmed in program mode, the data is read to  
check that it has been programmed correctly.  
After the programming time has elapsed, exit programming mode (clear the P bit to 0) and select  
program-verify mode (set the PV bit to 1). In program-verify mode, a program-verify voltage is  
applied to the memory cells at the latched address. If the flash memory is read in this state, the  
data at the latched address will be read. After selecting program-verify mode, wait 4 µs or more  
before reading, then compare the programmed data with the verify data. If they agree, exit  
program-verify mode and program the next address. If they do not agree, select program mode  
again and repeat the same program and program-verify sequence. Do not repeat the program and  
program-verify sequence more than 50 times* for the same bit.  
Note: * Keep the total programming time under 1 ms for each bit.  
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