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HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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Prewrite Flowchart  
Start  
Set erase block register  
(set bit of block to be programmed to 1)  
Set start address*5  
n = 1  
Write H'00 to flash memory  
(Flash memory latches  
write address and write data)*1  
Address + 1 address  
Notes: *1 Use a byte transfer instruction.  
Enable watchdog timer*2  
*2 Set the timer overflow interval to the  
shortest value (CKS2, CKS1, CKS0  
all cleared to 0).  
*3 In prewrite-verify mode P, E, PV,  
and EV are all cleared to 0 and 12 V  
is applied to FVPP. Read the data  
with a byte transfer instruction.  
Select program mode  
( P bit = 1 in FLMCR)  
Wait (x) µs*4  
*4 x:  
tVS1: 4 µs or more  
N: 50 (set N so that total  
10 to 20 µs  
End of programming  
Clear P bit  
Disable watchdog timer  
programming time does not  
exceed 1 ms)  
*5 Start and last addresses shall be top  
and last addresses of the block to be  
erased.  
Wait (tVS1) µs*4  
Prewrite verify*3  
No go  
(read data = H'00?)  
OK  
No  
n N?*4  
Yes  
n + 1 n  
Programming error  
No  
Last address?*5  
Yes  
Clear erase block register  
(clear bit of programmed block to 0)  
End of prewrite  
Figure 19.10 Prewrite Flowchart  
400  
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