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HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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19.4.3 Programming Flowchart and Sample Program  
Flowchart for Programming One Byte  
Start  
Set erase block register  
(set bit of block to be programmed to 1)  
Write data to flash memory (flash  
memory latches write  
address and data)*1  
n = 1  
Enable watchdog timer*2  
Select program mode  
Notes: *1 Write the data to be programmed  
(P bit = 1 in FLMCR)  
with a byte transfer instruction.  
*2 Set the timer overflow interval to the  
shortest value (CKS2, CKS1, CKS0  
all cleared to 0).  
Wait (x) µs*4  
*3 Read the memory data to be verified  
with a byte transfer instruction.  
Clear P bit  
End of programming  
*4 x:  
tVS1: 4 µs or more  
N: 50 (set N so that total  
10 to 20 µs  
Disable watchdog timer  
Select program-verify mode  
(PV bit = 1 in FLMCR)  
programming time does not  
exceed 1 ms)  
Wait (tVS1) µs*4  
No go  
Verify*3 (read memory)  
OK  
End of verification  
Clear PV bit  
Clear PV bit  
Clear erase block register  
(clear bit of programmed block to 0)  
No  
n N?*4  
End (1-byte data programmed)  
Yes  
n + 1 n  
Programming error  
Figure 19.8 Programming Flowchart  
396  
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