Typical Characteristics TA = 25°C unless otherwise noted
1.10
2000
C
= C + C
GD
ISS
GS
I
= 250µA
D
C
C
+ C
OSS
DS GD
1000
1.05
C
= C
GD
RSS
1.00
0.95
0.90
V
= 0V, f = 1MHz
GS
100
0.1
-80
-40
0
40
80
120
160
30
1
10
o
T , JUNCTION TEMPERATURE ( C)
J
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 12. Capacitance vs Drain to Source
Voltage
10
V
= 15V
DD
8
6
4
2
0
WAVEFORMS IN
DESCENDING ORDER:
I
I
= 11.6A
= 1A
D
D
0
5
10
15
20
25
Q , GATE CHARGE (nC)
g
Figure 13. Gate Charge Waveforms for Constant Gate Currents
6
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FDS8880 Rev. A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
