欢迎访问ic37.com |
会员登录 免费注册
发布采购

FDS8880 参数 Datasheet PDF下载

FDS8880图片预览
型号: FDS8880
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道PowerTrench MOSFET的 [N-Channel PowerTrench MOSFET]
分类和应用:
文件页数/大小: 12 页 / 260 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号FDS8880的Datasheet PDF文件第1页浏览型号FDS8880的Datasheet PDF文件第3页浏览型号FDS8880的Datasheet PDF文件第4页浏览型号FDS8880的Datasheet PDF文件第5页浏览型号FDS8880的Datasheet PDF文件第6页浏览型号FDS8880的Datasheet PDF文件第7页浏览型号FDS8880的Datasheet PDF文件第8页浏览型号FDS8880的Datasheet PDF文件第9页  
MOSFET Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDSS  
VGS  
Parameter  
Ratings  
30  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
V
V
±20  
Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W)  
Continuous (TA = 25oC, VGS = 4.5V, RθJA = 50oC/W)  
Pulsed  
11.6  
10.7  
A
A
ID  
Figure 4  
82  
A
EAS  
Single Pulse Avalanche Energy (Note 1)  
mJ  
Power dissipation  
Derate above 25oC  
2.5  
W
PD  
20  
mW/oC  
oC  
TJ, TSTG  
Operating and Storage Temperature  
-55 to 150  
Thermal Characteristics  
RθJC  
RθJA  
RθJA  
Thermal Resistance, Junction to Case (Note 2)  
25  
50  
85  
oC/W  
oC/W  
oC/W  
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)  
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)  
Package Marking and Ordering Information  
Device Marking  
FDS8880  
Device  
FDS8880  
Package  
SO-8  
Reel Size  
330mm  
Tape Width  
Quantity  
12mm  
12mm  
2500 units  
2500 units  
FDS8880  
FDS8880_NL (Note 4)  
SO-8  
330mm  
Electrical Characteristics TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Off Characteristics  
BVDSS  
Drain to Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate to Source Leakage Current  
ID = 250µA, VGS = 0V  
30  
-
-
-
-
-
-
V
V
DS = 24V  
1
IDSS  
µA  
VGS = 0V  
TA = 150oC  
-
250  
±100  
IGSS  
VGS = ±20V  
-
nA  
On Characteristics  
VGS(TH)  
Gate to Source Threshold Voltage  
VGS = VDS, ID = 250µA  
1.2  
-
2.5  
V
ID = 11.6A, VGS = 10V  
-
-
0.0079 0.010  
0.0096 0.012  
I
D = 10.7A, VGS = 4.5V  
rDS(ON)  
Drain to Source On Resistance  
ID = 11.6A, VGS = 10V,  
TA = 150oC  
-
0.0125 0.0163  
Dynamic Characteristics  
CISS  
COSS  
CRSS  
RG  
Input Capacitance  
-
1235  
260  
150  
2.5  
23  
-
-
pF  
pF  
pF  
VDS = 15V, VGS = 0V,  
f = 1MHz  
Output Capacitance  
-
Reverse Transfer Capacitance  
Gate Resistance  
-
-
VGS = 0.5V, f = 1MHz  
VGS = 0V to 10V  
0.6  
4.3  
30  
16  
1.6  
-
Qg(TOT)  
Qg(5)  
Qg(TH)  
Qgs  
Total Gate Charge at 10V  
Total Gate Charge at 5V  
Threshold Gate Charge  
Gate to Source Gate Charge  
Gate Charge Threshold to Plateau  
Gate to Drain “Miller” Charge  
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
nC  
VDD = 15V  
D = 11.6A  
Ig = 1.0mA  
VGS = 0V to 5V  
VGS = 0V to 1V  
12  
I
1.3  
3.3  
2.0  
4.2  
Qgs2  
Qgd  
-
-
2
www.fairchildsemi.com  
FDS8880 Rev. A1  
 复制成功!