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FDS8880 参数 Datasheet PDF下载

FDS8880图片预览
型号: FDS8880
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道PowerTrench MOSFET的 [N-Channel PowerTrench MOSFET]
分类和应用:
文件页数/大小: 12 页 / 260 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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PSPICE Electrical Model  
.SUBCKT FDS8880 2 1 3 ;  
Ca 12 8 9.3e-10  
rev August 2004  
Cb 15 14 9.3e-10  
Cin 6 8 1.15e-9  
Dbody 7 5 DbodyMOD  
Dbreak 5 11 DbreakMOD  
Dplcap 10 5 DplcapMOD  
LDRAIN  
DPLCAP  
DRAIN  
2
5
10  
Ebreak 11 7 17 18 33.5  
Eds 14 8 5 8 1  
Egs 13 8 6 8 1  
Esg 6 10 6 8 1  
Evthres 6 21 19 8 1  
Evtemp 20 6 18 22 1  
RLDRAIN  
RSLC1  
51  
DBREAK  
+
RSLC2  
5
ESLC  
11  
51  
-
+
50  
-
17  
DBODY  
RDRAIN  
6
8
EBREAK 18  
-
ESG  
It 8 17 1  
EVTHRES  
+
16  
21  
+
-
19  
8
MWEAK  
Lgate 1 9 3.6e-9  
Ldrain 2 5 1.0e-9  
Lsource 3 7 1.2e-10  
LGATE  
EVTEMP  
RGATE  
GATE  
1
+
6
-
18  
22  
MMED  
9
20  
MSTRO  
8
RLGATE  
RLgate 1 9 36  
RLdrain 2 5 10  
RLsource 3 7 1.2  
LSOURCE  
CIN  
SOURCE  
3
7
RSOURCE  
RLSOURCE  
Mmed 16 6 8 8 MmedMOD  
Mstro 16 6 8 8 MstroMOD  
Mweak 16 21 8 8 MweakMOD  
S1A  
S2A  
RBREAK  
12  
15  
13  
8
14  
13  
17  
18  
RVTEMP  
19  
-
S1B  
S2B  
Rbreak 17 18 RbreakMOD 1  
Rdrain 50 16 RdrainMOD 2.9e-3  
Rgate 9 20 2.5  
RSLC1 5 51 RSLCMOD 1e-6  
RSLC2 5 50 1e3  
Rsource 8 7 RsourceMOD 5.4e-3  
Rvthres 22 8 RvthresMOD 1  
Rvtemp 18 19 RvtempMOD 1  
S1a 6 12 13 8 S1AMOD  
S1b 13 12 13 8 S1BMOD  
S2a 6 15 14 13 S2AMOD  
S2b 13 15 14 13 S2BMOD  
13  
CB  
CA  
IT  
14  
+
+
VBAT  
6
8
5
8
EGS  
EDS  
+
-
-
8
22  
RVTHRES  
Vbat 22 19 DC 1  
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*170),5))}  
.MODEL DbodyMOD D (IS=2.6E-12 IKF=10 N=1.01 RS=5.6e-3 TRS1=8e-4 TRS2=2e-7  
+ CJO=5e-10 M=0.55 TT=1e-11 XTI=2)  
.MODEL DbreakMOD D (RS=0.2 TRS1=1e-3 TRS2=-8.9e-6)  
.MODEL DplcapMOD D (CJO=4.27e-10 IS=1e-30 N=10 M=0.38)  
.MODEL MmedMOD NMOS (VTO=1.8 KP=5 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=2.5)  
.MODEL MstroMOD NMOS (VTO=2.21 KP=150 IS=1e-30 N=10 TOX=1 L=1u W=1u)  
.MODEL MweakMOD NMOS (VTO=1.53 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=25 RS=0.1)  
.MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-8e-7)  
.MODEL RdrainMOD RES (TC1=5.5e-3 TC2=1.2e-5)  
.MODEL RSLCMOD RES (TC1=1e-4 TC2=1e-6)  
.MODEL RsourceMOD RES (TC1=1e-3 TC2=3e-6)  
.MODEL RvthresMOD RES (TC1=-1.5e-3 TC2=-6e-6)  
.MODEL RvtempMOD RES (TC1=-1.8e-3 TC2=2e-7)  
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3.5)  
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4)  
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.5 VOFF=-1.0)  
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-1.0 VOFF=-1.5)  
.ENDS  
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global  
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank  
Wheatley.  
9
www.fairchildsemi.com  
FDS8880 Rev. A1  
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