Typical Characteristics TA = 25°C unless otherwise noted
100
50
40
30
20
10
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
DD
)
AS
DSS
If R ≠ 0
V
= 15V
DD
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AV
AS
o
T
= 25 C
J
10
o
STARTING T = 25 C
J
o
o
T
= 150 C
T
= -55 C
J
J
o
STARTING T = 150 C
J
1
1.5
2.0
V , GATE TO SOURCE VOLTAGE (V)
GS
2.5
3.0
3.5
0.01
0.1
1
10
100
t
, TIME IN AVALANCHE (ms)
AV
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
Figure 6. Transfer Characteristics
50
50
40
30
20
10
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 4V
= 3V
V
= 10V
GS
GS
40
30
20
10
0
V
= 5V
GS
I
= 11.6A
D
V
GS
o
T
= 25 C
A
I
= 1A
D
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0.2
0.4
0.6
0.8
2
4
V , GATE TO SOURCE VOLTAGE (V)
GS
6
8
10
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.6
1.2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= V , I = 250µA
DS D
GS
1.4
1.0
0.8
0.6
1.2
1.0
0.8
0.6
V
= 10V, I = 11.6A
D
GS
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
5
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FDS8880 Rev. A1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
