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FDS8880 参数 Datasheet PDF下载

FDS8880图片预览
型号: FDS8880
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道PowerTrench MOSFET的 [N-Channel PowerTrench MOSFET]
分类和应用:
文件页数/大小: 12 页 / 260 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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Typical Characteristics TA = 25°C unless otherwise noted  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
12  
10  
8
V
= 10V  
GS  
V
= 4.5V  
GS  
6
4
2
0
o
R
=50 C/W  
θJA  
0
25  
50  
75  
100  
125  
150  
25  
50  
75  
100  
125  
150  
o
o
T
, AMBIENT TEMPERATURE ( C)  
T
, AMBIENT TEMPERATURE ( C)  
A
A
Figure 1. Normalized Power Dissipation vs  
Ambient Temperature  
Figure 2. Maximum Continuous Drain Current vs  
Ambient Temperature  
2
DUTY CYCLE - DESCENDING ORDER  
1
0.5  
o
R
=50 C/W  
0.2  
θJA  
0.1  
0.05  
0.02  
0.01  
0.1  
P
DM  
t
1
0.01  
t
2
SINGLE PULSE  
NOTES:  
DUTY FACTOR: D = t /t  
1
2
PEAK T = P  
x Z  
x R  
+ T  
A
J
DM  
θJA  
θJA  
0.001  
-5  
-4  
-3  
-2  
-1  
0
1
2
3
10  
10  
10  
10  
10  
10  
10  
10  
10  
t, RECTANGULAR PULSE DURATION (s)  
Figure 3. Normalized Maximum Transient Thermal Impedance  
1400  
TRANSCONDUCTANCE  
o
T
= 25 C  
MAY LIMIT CURRENT  
IN THIS REGION  
A
FOR TEMPERATURES  
ABOVE 25 C DERATE PEAK  
CURRENT AS FOLLOWS:  
o
V
= 10V  
GS  
150 - T  
A
I = I  
25  
125  
V
= 4.5V  
GS  
100  
10  
-5  
-4  
-3  
-2  
-1  
0
1
2
3
10  
10  
10  
10  
10  
t, PULSE WIDTH (s)  
10  
10  
10  
10  
Figure 4. Peak Current Capability  
4
www.fairchildsemi.com  
FDS8880 Rev. A1  
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