EtronTech
EM68C16CWQG
Table 15. Absolute Maximum DC Ratings
Symbol
Parameter
Values
Unit Note
VDD
Voltage on VDD pin relative to Vss
-1.0 ~ 2.3
-0.5 ~ 2.3
-0.5 ~ 2.3
-0.5 ~ 2.3
-55 ~ 100
V
V
V
V
1,3
1,3
1,3
1,4
1,2
VDDQ Voltage on VDDQ pin relative to Vss
VDDL Voltage on VDDL pin relative to Vss
VIN, VOUT Voltage on any pin relative to Vss
TSTG Storage temperature
C
°
NOTE1: Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
devices. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
NOTE2: Storage temperature is the case temperature on the center/top side of the DRAM.
NOTE3: When VDD and VDDQ and VDDL are less than 500mV, Vref may be equal to or less than 300mV.
NOTE4: Voltage on any input or I/O may not exceed voltage on VDDQ
.
Table 16. Operating Temperature Condition
Symbol
Parameter
Values
Unit Note
1-3
Industrial temperature
-40 ~ 95
C
°
TOPER
NOTE1: Operating Temperature is the case surface temperature on the center/top side of the DRAM.
NOTE2: The operation temperature range are the temperature where all DRAM specification will be supported.
Outside of this temperature range, even if it is still within the limit of stress condition, some deviation on
portion of operation specification may be required. During operation, the DRAM case temperature must be
maintained between 0 - 85°C under all other specification parameter. However, in some applications, it is
desirable to operate the DRAM up to 95°C case temperature. Therefore, two spec options may exist.
a) Supporting 0 - 85°C with full JEDEC AC & DC specifications. This is the minimum requirements for all
operating temperature options.
b) This is an optional feature and not required. Supporting 0 - 85°C and being able to extend to 95°C with
doubling auto-refresh commands in frequency to a 32 ms period ( tREFI = 3.9 us). Supporting higher
temperature Self-Refresh entry via the control of EMSR (2) bit A7.
NOTE3: During operation, the DRAM case temperature must be maintained between -40 - 95 °C for Industrial grade
under all specification parameters.
Table 17. Recommended DC Operating Conditions (SSTL_1.8)
Symbol
Parameter
Min.
1.7
Typ.
1.8
Max.
1.9
Unit Note
VDD
Power supply voltage
V
V
V
1
5
VDDL Power supply voltage for DLL
1.7
1.8
1.9
VDDQ Power supply voltage for I/O Buffer
1.7
1.8
1.9
1,5
VREF Input reference voltage
0.49 x VDDQ
0.5 x VDDQ
0.51 x VDDQ
mV 2,3
VTT
Termination voltage
VREF - 0.04
VREF
VREF + 0.04
V
4
NOTE1: There is no specific device VDD supply voltage requirement for SSTL_18 compliance. However under all
conditions VDDQ must be less than or equal to VDD.
NOTE2: The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the
value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track
variations in VDDQ
.
NOTE3: Peak to peak ac noise on VREF may not exceed +/-2 % VREF (dc).
NOTE4: VTT of transmitting device must track VREF of receiving device.
NOTE5: VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDL tied together.
Rev. 1.2
22
Apr. /2016
ETRON [ ETRON TECHNOLOGY, INC. ]
