BLF8G27LS-150(G)V
Power LDMOS transistor
7.4.2 IS-95
aaa-007174
aaa-007175
20
19
18
17
16
15
40
30
20
10
0
G
η
D
(%)
p
(dB)
(1))
(2))
(3))
(1)
(2)
(3)
26
30
34
38
42
46
50
35
38
41
44
47
50
P
(dBm)
P
L
(dBm)
L
VDS = 28 V; IDq = 1300 mA.
VDS = 28 V; IDq = 1300 mA.
(1) f = 2605 MHz
(2) f = 2655 MHz
(3) f = 2695 MHz
(1) f = 2605 MHz
(2) f = 2655 MHz
(3) f = 2695 MHz
Fig 5. Power gain as a function of output power;
typical values
Fig 6. Drain efficiency as a function of output power;
typical values
aaa-007176
aaa-007177
-30
8855kk
(dBc)
-50
ACPR
AACCPPRR
198800kk
(dBc)
-55
-40
-60
-65
-70
-75
-80
(1)
(2)
(3)
(1))
(2))
(3))
-50
-60
-70
35
38
41
44
47
50
35
38
41
44
47
50
P
(dBm)
P
L
(dBm)
L
VDS = 28 V; IDq = 1300 mA.
VDS = 28 V; IDq = 1300 mA.
(1) f = 2605 MHz
(2) f = 2655 MHz
(3) f = 2695 MHz
(1) f = 2605 MHz
(2) f = 2655 MHz
(3) f = 2695 MHz
Fig 7. Adjacent channel power ratio (885 kHz) as a
function of output power; typical values
Fig 8. Adjacent channel power ratio (1980 kHz) as a
function of output power; typical values
BLF8G27LS-150V_8G27LS-150GV#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
7 of 17
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