BLF8G27LS-150(G)V
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data; IDq = 1300 mA; VDS = 28 V.
[1]
[1]
f
ZS
ZL
(MHz)
()
()
BLF8G27LS-150V
2500
0.70 j3.50
1.10 j4.40
2.00 j4.90
2.68 j1.86
2.86 j2.03
3.27 j1.87
2600
2700
BLF8G27LS-150GV
2500
2600
2700
1.00 j5.70
1.50 j6.90
2.10 j8.00
2.35 j4.04
2.52 j4.32
3.21 j4.36
[1] ZS and ZL defined in Figure 1.
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
BLF8G27LS-150V_8G27LS-150GV#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
4 of 17
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