BLF8G27LS-150(G)V
Power LDMOS transistor
7.4 Graphical data
7.4.1 Pulsed CW
aaa-007172
aaa-007173
19
18
17
16
15
14
60
50
40
30
20
10
0
G
η
D
(%)
p
(dB)
(1)
(2)
(3)
(1))
(2))
(3))
35
39
43
47
51
55
35
39
43
47
51
55
P
(dBm)
P
L
(dBm)
L
VDS = 28 V; IDq = 1300 mA; tp = 100 s; = 10 %.
VDS = 28 V; IDq = 1300 mA; tp = 100 s; = 10 %.
(1) f = 2600 MHz
(2) f = 2655 MHz
(3) f = 2700 MHz
(1) f = 2600 MHz
(2) f = 2655 MHz
(3) f = 2700 MHz
Fig 3. Power gain as a function of output power;
typical values
Fig 4. Drain efficiency as a function of out power;
typical values
BLF8G27LS-150V_8G27LS-150GV#4
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Product data sheet
Rev. 4 — 1 September 2015
6 of 17
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