BLF8G27LS-150(G)V
Power LDMOS transistor
7.4.5 2-Tone VBW
aaa-007189
-10
IMDD
(dBc)
(1))
(2))
-25
-40
-55
IMDD3
IMDD5
(1))
(2))
(1))
(2))
IMDD7
-70
1
2
10
10
carrier spacing (MHz)
VDS = 28 V; IDq = 1300 mA.
(1) low
(2) high
Fig 20. VBW capacity in class-AB test circuit
BLF8G27LS-150V_8G27LS-150GV#4
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Product data sheet
Rev. 4 — 1 September 2015
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