BLF8G27LS-150(G)V
Power LDMOS transistor
aaa-007182
aaa-007183
10
8
35
30
25
20
15
10
PARR
(dB)
RL
in
(dB)
6
(1)
(2)
(3)
(1))
(2))
(3))
4
2
0
36
38
40
42
44
46
48
50
36
38
40
42
44
46
48
50
P
(dBm)
P
(dBm)
L
L
VDS = 28 V; IDq = 1300 mA.
VDS = 28 V; IDq = 1300 mA.
(1) f = 2602.5 MHz
(2) f = 2655 MHz
(3) f = 2697.5 MHz
(1) f = 2602.5 MHz
(2) f = 2655 MHz
(3) f = 2697.5 MHz
Fig 13. Peak-to-average power ratio as a function of
output power; typical values
Fig 14. Input return loss as a function of output
power; typical values
7.4.4 2-Carrier W-CDMA
aaa-007184
aaa-007185
20
50
G
η
D
(%)
p
(dB)
19
18
17
16
15
40
30
20
10
0
(1)
(2)
(3)
(1))
(2))
(3))
36
38
40
42
44
46
48
50
36
38
40
42
44
46
48
50
P
(dBm)
P
(dBm)
L
L
VDS = 28 V; IDq = 1300 mA.
VDS = 28 V; IDq = 1300 mA.
(1) f = 2605 MHz
(2) f = 2655 MHz
(3) f = 2695 MHz
(1) f = 2605 MHz
(2) f = 2655 MHz
(3) f = 2695 MHz
Fig 15. Power gain as a function of output power;
typical values
Fig 16. Drain efficiency as a function of output power;
typical values
BLF8G27LS-150V_8G27LS-150GV#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
9 of 17
ETC [ ETC ]
