BLF8G27LS-150(G)V
Power LDMOS transistor
aaa-007186
35
30
25
20
15
10
RL
in
(dB)
(1))
(2))
(3))
36
38
40
42
44
46
48
50
P
(dBm)
L
VDS = 28 V; IDq = 1300 mA.
(1) f = 2605 MHz
(2) f = 2655 MHz
(3) f = 2695 MHz
Fig 17. Input return loss as a function of output power; typical values
aaa-007187
aaa-007188
-20
ACPR
-20
10MM
(dBc)
ACPR
5M
(dBc)
-30
-40
-50
-60
-30
-40
-50
-60
(1))
(2))
(3))
(1))
(2))
(3))
35
38
41
44
47
50
35
38
41
44
47
P (dBm)
L
50
P
(dBm)
L
VDS = 28 V; IDq = 1300 mA.
VDS = 28 V; IDq = 1300 mA.
(1) f = 2605 MHz
(2) f = 2655 MHz
(3) f = 2695 MHz
(1) f = 2605 MHz
(2) f = 2655 MHz
(3) f = 2695 MHz
Fig 18. Adjacent channel power ratio (5 MHz) as a
function of output power; typical values
Fig 19. Adjacent channel power ratio (10 MHz) as a
function of output power; typical values
BLF8G27LS-150V_8G27LS-150GV#4
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© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
10 of 17
ETC [ ETC ]
