ESMT
M14D5121632A (2H)
Operation Temperature Condition (TC) -40°C~95°C
Auto Refresh & Self Refresh
Auto Refresh
An Auto Refresh command is issued by having CS , RAS and CAS held LOW with CKE and WE HIGH at the rising edge of the
clock(CLK). All banks must be precharged and idle for tRP(min) before the Auto Refresh command is applied. An address counter,
internal to the device, supplies the bank address during the refresh cycle. No control of the external address bus is required once
this cycle has started. When the refresh cycle has completed, all banks will be in the idle state. A delay between the Auto Refresh
command and the next Bank Active command or subsequent Auto Refresh command must be greater than or equal to the
tRFC(min).To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh
interval is provided. A maximum of eight Refresh commands can be posted, meaning that the maximum absolute interval between
any Refresh command and the next Refresh command is 9 x tREFI
.
C L K
C L K
Auto
Refresh
C O M M A N D
PR E
C M D
CK E
= Hi gh
t R F C
t R P
Elite Semiconductor Memory Technology Inc.
Publication Date : Aug. 2011
Revision : 1.1
50/62
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
