ESMT
M14D5121632A (2H)
Operation Temperature Condition (TC) -40°C~95°C
Power-Down
Power-Down is synchronously entered when CKE is registered LOW (no accesses can be in progress). CKE is not allowed to go
LOW while MRS or EMRS command time, or read or write operation is in progress. CKE is allowed to go LOW while any of other
operations such as Bank Active, Precharge or Auto Precharge, or Auto Refresh is in progress. The DLL should be in a locked state
when Power-Down is entered. Otherwise DLL should be reset after exiting Power-Down mode for proper read operation.
If Power-Down occurs when all banks are idle, this mode is referred to as Precharge Power-Down; if Power-Down occurs when
there is a Bank Active command in any bank, this mode is referred to as Active Power-Down. Entering Power-Down deactivates
the input and output buffers, excluding CLK, CLK , ODT and CKE. Also the DLL is disabled upon entering Precharge Power-Down
or slow exit Active Power-Down, but the DLL is kept enabled during fast exit Active Power-Down. In Power-Down mode, CKE LOW
and a stable clock signal must be maintained at the inputs of the device, and ODT should be in a valid state but all other input
signals are “Don’t Care”. CKE LOW must be maintained until tCKE has been satisfied. Power-Down duration is limited by 9 times
tREFI of the device.
The Power-Down state is synchronously exited when CKE is registered HIGH (along with a NOP or DESELECT command). CKE
HIGH must be maintained until tCKE has been satisfied. A valid, executable command can be applied with Power-Down exit latency,
t
XP, tXARD, or tXARDS, after CKE goes HIGH.
CLK
CLK
t
IS tIH
tIH
t
IS tIH
tIH
tIS
CKE
VALID
NOP
NOP
VALID
VALID
VALID
Command
tCKE
t
CKE
t
t
XP,
tXARD,
XARDS
t
CKE
Enter power-down mode
Exit power-down mode
: Don’t care
Read to Power-Down Entry
Tx+8
Tx+9
T0
Tx+5
Tx+6
Tx+7
T1
T2
Tx+2
Tx+3
Tx+4
Tx+1
Tx
CLK
CLK
CKE should be kept high until the end of burst operation
Command
CKE
READ
High
DQS
DQS
BL = 4
AL + CL
DoutA0
DoutA2 DoutA3
DQ
DoutA1
Tx+5
Tx+7
Tx+8
Tx+9
T0
Tx+4
Tx+6
T1
T2
Tx+2
Tx+3
Tx
Tx+1
CLK
CLK
Command
CKE
READ
CKE should be kept high until the end of burst operation
High
DQS
DQS
BL = 8
AL + CL
DoutA0
DoutA2
DoutA4 DoutA5
DoutA7
DoutA6
DQ
DoutA3
DoutA1
Elite Semiconductor Memory Technology Inc.
Publication Date : Aug. 2011
Revision : 1.1
52/62
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
