ESMT
M14D5121632A (2H)
Operation Temperature Condition (TC) -40°C~95°C
Read with Auto Precharge to Power-Down Entry
Tx+8
Tx+9
T0
Tx+5
Tx+6
Tx+7
T1
T2
Tx+2
Tx+3
Tx+4
Tx+1
Tx
CLK
CLK
Command
READ
PRE
CKE should be kept high until the end of burst operation
AL+BL/2
with tRTP =7.5ns
and tRAS(min.) satisfied
CKE
DQS
BL = 4
DQS
AL + CL
DQ
DoutA0
DoutA2 DoutA3
DoutA1
Tx+8
Tx+9
T0
Tx+4
Tx+5
Tx+6
Tx+7
T1
T2
Tx+2
PRE
Tx+3
Tx
Tx+1
CLK
CLK
Start internal precharge
Command
READ
CKE should be kept high until the end of burst operation
AL+BL/2
with tRTP = 7.5ns
and tRAS(min.) satisfied
CKE
DQS
DQS
BL = 8
AL + CL
DoutA0
DoutA2
DQ
DoutA3 DoutA4 DoutA5 DoutA6 DoutA7
DoutA1
Write to Power-Down Entry
Ty+2
Tx+2
Ty
Ty+1
Ty+3
T0
Tx+1
T1
Tm
Tm+1
Tm+3
Tx
Tm+2
CLK
CLK
Command
CKE
WRITE
t
WTR
DQS
DQS
BL = 4
WL
DinA0
DinA3
DQ
DinA1 DinA2
Tm+2
Tx+3
T0
Tx
Tx+1
Tx+2
Tx+4
Tm+3
Tm+5
T1
Tm
Tm+4
Tm+1
CLK
CLK
Command
WRITE
CKE
DQS
t
WTR
BL = 8
DQS
WL
DinA7
DinA6
DinA5
DinA0
DQ
DinA1 DinA2 DinA3 DinA4
Elite Semiconductor Memory Technology Inc.
Publication Date : Aug. 2011
Revision : 1.1 53/62
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
