ESMT
M14D5121632A (2H)
Operation Temperature Condition (TC) -40°C~95°C
< RL= 5 (AL= 2; CL= 3); BL= 4; tRCD = 3 clocks; tRTP <= 2 clocks >
T4
T0
T1
T2
T5
T6
T7
T8
T3
CLK
CLK
Bank A
Active
Posted CAS
READ A
CMD
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Autoprecharge
>= tRAS(min)
Autoprecharge begins
DQS,DQS
DQs
tRC Limit
CL = 3
AL = 2
>= tRP
RL = 5
DoutA0 DoutA1
DoutA3
DoutA2
>= tRC
CLK
CLK
Bank A
Active
Posted CAS
READ A
CMD
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Autoprecharge
>= tRAS(min)
Autoprecharge begins
DQS,DQS
DQs
tRP Limit
CL = 3
AL = 2
>= tRP
RL = 5
DoutA0 DoutA1
DoutA3
DoutA2
>= tRC
Write with Auto Precharge
If A10 is HIGH when a Write command is issued, the Write with Auto Precharge function is engaged. The device automatically
begins precharge operation after the completion of the burst write plus write recovery time (tWR). The Bank Active command
undergoing Auto Precharge from the completion of the write burst may be reactivated if the following two conditions are satisfied.
(1) The data-in to bank activate delay time (tWR + tRP) has been satisfied.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
< WR = 2; BL= 4; tRP = 3 clocks >
T4
T0
T1
T2
T5
T6
T7
Tm
T3
CLK
CLK
Bank A
Active
Posted CAS
WRITE
Autoprecharge
CMD
NOP
NOP
NOP
NOP
NOP
NOP
NOP
A
Auto Precharge begins
>= tRP
DQS,DQS
DQs
tRC Limit
>= tWR
WL = RL-1 = 2
DinA3
DinA1
DinA2
T5
DinA0
>= tRC
T4
T0
T3
T12
T6
T7
T8
T9
CLK
CLK
Bank A
Active
Posted CAS
WRITE A
Autoprecharge
CMD
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Auto Precharge begins
tWR + tRP
DQS,DQS
DQs
>= tWR
>= tRP
WL = RL-1 = 4
DinA0 DinA1
DinA3
DinA2
>= tRC
Elite Semiconductor Memory Technology Inc.
Publication Date : Aug. 2011
Revision : 1.1 49/62
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
