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M14D5121632A-2.5BIG2H 参数 Datasheet PDF下载

M14D5121632A-2.5BIG2H图片预览
型号: M14D5121632A-2.5BIG2H
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 62 页 / 1001 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M14D5121632A (2H)  
Operation Temperature Condition (TC) -40°C~95°C  
Extended Mode Register Set-2 [EMRS(2)]  
The EMRS(2) stores the data for enabling or disabling high temperature self refresh rate. The default value of the EMRS(2) is not  
defined, therefore EMRS(2) must be written after power up for proper operation. The EMRS(2) is written by asserting LOW on CS ,  
RAS , CAS , WE , BA0 and HIGH on BA1 (The device should be in all bank Precharge with CKE already high prior to writing into  
EMRS(2)). The state of address pins A0~A12 in the same cycle as CS , RAS , CAS , WE and BA0 going LOW and BA1 going  
HIGH are written in the EMRS(2).  
The tMRD time is required to complete the write operation to the EMRS(2). The EMRS(2) contents can be changed using the same  
command and clock cycle requirements during normal operation as long as all banks are in the idle state. A7 is used for high  
temperature self refresh rate enable or disable.  
BA1 BA0 A12 A11 A10  
A9  
A8  
A7  
A6  
A5  
0*1  
A4  
A3  
A2  
A1  
0*1  
A0  
1
0
0*1  
SRF  
DCC*2  
High Temperature  
Self Refresh rate  
A7  
BA1 BA0  
Mode Register  
MRS  
EMRS(1)  
EMRS(2)  
EMRS(3): Reserved  
0
1
Disable  
Enable  
0
0
1
1
0
1
0
1
A3  
DCC Enable  
0
1
Disable  
Enable  
*Note :  
1. A0~A2, A4~A6 and A8~A12 are reserved for future use and must be set to 0.  
2. User may enable or disable the DCC (Duty Cycle Corrector) by programming A3 bit accordingly.  
Extended Mode Register Set-3 [EMRS(3)]  
BA1 BA0 A12 A11 A10  
A9  
A8  
A7  
A6  
0
A5  
A4  
A3  
A2  
A1  
A0  
1
1
BA1 BA0  
Mode Register  
MRS  
EMRS(1)  
EMRS(2)  
EMRS(3): Reserved  
0
0
1
1
0
1
0
1
Note: EMRS(3) is reserved for future. All bits except BA0 and BA1 are reserved for future use and must be set to 0 when  
setting to mode register during initialization.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Aug. 2011  
Revision : 1.1 29/62  
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