ESMT
M14D5121632A (2H)
Operation Temperature Condition (TC) -40°C~95°C
Extended Mode Register Set-2 [EMRS(2)]
The EMRS(2) stores the data for enabling or disabling high temperature self refresh rate. The default value of the EMRS(2) is not
defined, therefore EMRS(2) must be written after power up for proper operation. The EMRS(2) is written by asserting LOW on CS ,
RAS , CAS , WE , BA0 and HIGH on BA1 (The device should be in all bank Precharge with CKE already high prior to writing into
EMRS(2)). The state of address pins A0~A12 in the same cycle as CS , RAS , CAS , WE and BA0 going LOW and BA1 going
HIGH are written in the EMRS(2).
The tMRD time is required to complete the write operation to the EMRS(2). The EMRS(2) contents can be changed using the same
command and clock cycle requirements during normal operation as long as all banks are in the idle state. A7 is used for high
temperature self refresh rate enable or disable.
BA1 BA0 A12 A11 A10
A9
A8
A7
A6
A5
0*1
A4
A3
A2
A1
0*1
A0
1
0
0*1
SRF
DCC*2
High Temperature
Self Refresh rate
A7
BA1 BA0
Mode Register
MRS
EMRS(1)
EMRS(2)
EMRS(3): Reserved
0
1
Disable
Enable
0
0
1
1
0
1
0
1
A3
DCC Enable
0
1
Disable
Enable
*Note :
1. A0~A2, A4~A6 and A8~A12 are reserved for future use and must be set to 0.
2. User may enable or disable the DCC (Duty Cycle Corrector) by programming A3 bit accordingly.
Extended Mode Register Set-3 [EMRS(3)]
BA1 BA0 A12 A11 A10
A9
A8
A7
A6
0
A5
A4
A3
A2
A1
A0
1
1
BA1 BA0
Mode Register
MRS
EMRS(1)
EMRS(2)
EMRS(3): Reserved
0
0
1
1
0
1
0
1
Note: EMRS(3) is reserved for future. All bits except BA0 and BA1 are reserved for future use and must be set to 0 when
setting to mode register during initialization.
Elite Semiconductor Memory Technology Inc.
Publication Date : Aug. 2011
Revision : 1.1 29/62