欢迎访问ic37.com |
会员登录 免费注册
发布采购

M14D5121632A-2.5BIG2H 参数 Datasheet PDF下载

M14D5121632A-2.5BIG2H图片预览
型号: M14D5121632A-2.5BIG2H
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 62 页 / 1001 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第23页浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第24页浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第25页浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第26页浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第28页浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第29页浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第30页浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第31页  
ESMT  
M14D5121632A (2H)  
Operation Temperature Condition (TC) -40°C~95°C  
Burst Address Ordering for Burst Length  
Burst  
Starting Column Address  
Sequential Mode  
Interleave Mode  
Length  
(A2, A1,A0)  
000  
0, 1, 2, 3  
0, 1, 2, 3  
001  
1, 2, 3, 0  
1, 0, 3, 2  
4
010  
2, 3, 0, 1  
2, 3, 0, 1  
011  
3, 0, 1, 2  
3, 2, 1, 0  
000  
0, 1, 2, 3, 4, 5, 6, 7  
1, 2, 3, 0, 5, 6, 7, 4  
2, 3, 0, 1, 6, 7, 4, 5  
3, 0, 1, 2, 7, 4, 5, 6  
4, 5, 6, 7, 0, 1, 2, 3  
5, 6, 7, 4, 1, 2, 3, 0  
6, 7, 4, 5, 2, 3, 0, 1  
7, 4, 5, 6, 3, 0, 1, 2  
0, 1, 2, 3, 4, 5, 6, 7  
1, 0, 3, 2, 5, 4, 7, 6  
2, 3, 0, 1, 6, 7, 4, 5  
3, 2, 1, 0, 7, 6, 5, 4  
4, 5, 6, 7, 0, 1, 2, 3  
5, 4, 7, 6, 1, 0, 3, 2  
6, 7, 4, 5, 2, 3, 0, 1  
7, 6, 5, 4, 3, 2, 1, 0  
001  
010  
011  
8
100  
101  
110  
111  
Mode Register Set  
0
1
2
3
4
5
6
7
8
C L K  
C L K  
* 1  
A n y  
C o m m a n d  
M o d e  
R e g i s t e r S e t  
P r e c h a r g e  
A l l B a n k s  
C O MM A N D  
* 2  
R P  
t
C K  
t
t
M R D  
*1 : MRS can be issued only at all banks precharge state.  
*2 : Minimum tRP is required to issue MRS command.  
DLL Enable / Disable  
The DLL must be enabled for normal operation. DLL enable is required during power-up initialization, and upon returning to normal  
operation after having the DLL disabled for the purpose of debug or evaluation (upon exiting Self Refresh Mode, the DLL is  
enabled automatically). Any time the DLL is enabled, 200 clock cycles must occur before a READ command can be issued.  
Output Drive Strength  
The normal drive strength for all outputs is specified to be SSTL_18. The device also supports a weak drive strength option,  
intended for lighter load and/or point-to-point environments.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Aug. 2011  
Revision : 1.1 27/62  
 复制成功!