ESMT
M14D5121632A (2H)
Operation Temperature Condition (TC) -40°C~95°C
De-rating Value of tDS/tDH with Differential DQS(DDR2-667, 800, 1066)
DQS, DQS differential slew rate
4.0 V/ns 3.0 V/ns 2.0 V/ns
ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH ΔtDS ΔtDH
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
0.8 V/ns
Unit
2.0 +100 +45 +100 +45 +100 +45
-
+79
+12
+7
-1
-
+33
+12
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ps
ps
ps
ps
ps
ps
ps
ps
ps
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
+67
+21
+67
+21
+67
+21
-
-
-
-
-
0
-
-
-
-
-
-
0
-
-
-
-
-
-
0
-5
-
0
0
-5
-13
-
0
+24
+19
+11
+2
-10
-
+24
+10
-7
-
-
-
-
-
-
-
-
-
-14
-14
+31
+23
+14
+2
-24
-
+22
+5
-18
-47
-89
-
-
-
-
-
-
-
-
-
-
-31
-19
-42
-
+35
+26
+14
-12
-52
+17
-6
-
-
-
-
-
-
-
-
-
-10
-
-30
-59
-
+38
+26
0
+6
-23
-65
-128
-
-
-
-
-35
-77
-140
+38
+12
-28
-11
-53
-116
-
-
-
-
-
-
-
-
-
-
-40
De-rating Value of tIS/tIH (DDR2-667, 800, 1066)
CLK, CLK differential slew rate
2.0 V/ns
ΔtIS
+150
+143
+133
+120
+100
+67
1.5 V/ns
ΔtIS
1.0 V/ns
ΔtIS
+210
+203
+193
+180
+160
+127
+60
Unit
ΔtIH
+94
+89
+83
+75
+45
+21
0
ΔtIH
+124
+119
+113
+105
+75
ΔtIH
+154
+149
+143
+135
+105
+81
4.0
+180
+173
+163
+150
+130
+97
+30
+25
+17
+8
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
3.5
3.0
2.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.25
0.2
0.15
0.1
+51
0
+30
+60
-5
-14
+16
+55
+46
-13
-31
-1
+47
+29
-22
-54
-24
+38
+6
-34
-83
-4
-53
+26
-23
-60
-125
-188
-292
-375
-500
-708
-1125
-30
-95
0
-65
-100
-168
-200
-325
-517
-1000
-70
-158
-262
-345
-470
-678
-1095
-40
-128
-232
-315
-440
-648
-1065
-138
-170
-295
-487
-970
-108
-140
-265
-457
-940
Elite Semiconductor Memory Technology Inc.
Publication Date : Aug. 2011
Revision : 1.1 21/62
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
