ESMT
M14D5121632A (2H)
Operation Temperature Condition (TC) -40°C~95°C
ODT DC Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Rtt effective impedance value for 75Ω setting
EMRS(1) [A6, A2] = 0, 1
Rtt1(eff)
60
75
90
Ω
Rtt effective impedance value for 150Ω setting
EMRS(1) [A6, A2) = 1, 0
Rtt2(eff)
120
150
180
Ω
Rtt effective impedance value for 50Ω setting
EMRS(1) [A6, A2] = 1, 1
Rtt3(eff)
40
-6
50
-
60
+6
Ω
Deviation of VM with respect to VDDQ /2
△VM
%
Note:
Measurement Definition for Rtt(eff) :
Rtt(eff) is determined by separately applying VIH(AC) and VIL(AC) to test pin, and then measuring current I(VIH(AC)) and
I(VIL(AC)) respectively.
Measurement Definition for △VM :
Measure voltage (VM) at test pin with no load.
OCD Default Characteristics
Parameter
Output impedance
Min.
Typ.
Max.
Unit
Note
12.6
0
18
-
23.4
4
Ω
Ω
1
Pull-up and pull-down mismatch
Output slew rate
1,2,3
1,4,5
1.5
-
5
V/ns
Note:
1. Absolute specifications: the operation range of Voltage and Temperature.
2. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1,420mV; (VOUT - VDDQ)/IOH must be
less than 23.4Ω for values of VOUT between VDDQ and VDDQ - 280mV. Impedance measurement condition for output sink
DC current: VDDQ = 1.7V; VOUT = 280mV; VOUT/IOL must be less than 23.4Ω for values of VOUT between 0V and 280mV.
3. Mismatch is absolute value between pull-up and pull-down; both are measured at same temperature and voltage.
4. Slew rate measured from VIL (AC) to VIH (AC).
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from
AC to AC.
Elite Semiconductor Memory Technology Inc.
Publication Date : Aug. 2011
Revision : 1.1 18/62
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
