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M14D5121632A-2.5BIG2H 参数 Datasheet PDF下载

M14D5121632A-2.5BIG2H图片预览
型号: M14D5121632A-2.5BIG2H
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 62 页 / 1001 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M14D5121632A (2H)  
Operation Temperature Condition (TC) -40°C~95°C  
AC Timing Parameter & Specifications - Contiuned  
-2.5  
-3  
Unit  
Note  
Parameter  
Symbol  
Min.  
Max.  
Min.  
Max.  
Minimum time clocks remains  
ON after CKE asynchronously  
drops low  
tDELAY  
tIS + tCK (avg)+tIH  
-
t
IS + tCK (avg)+tIH  
-
ns  
Output impedance test driver  
delay  
tOIT  
0
12  
0
0
12  
ns  
ns  
MRS command to ODT update  
delay  
tMOD  
0
2
12  
2
12  
2
ODT turn-on delay  
ODT turn-on  
tAOND  
tAON  
2
tCK  
ps  
t
AC(max.) +  
700  
t
AC(min.)  
tAC(max.) + 700  
2 x tCK  
tAC(min.)  
14,16  
2 x tCK  
ODT turn-on (Power-Down  
mode)  
tAONPD  
t
t
AC(min.) + 2000 +tAC(max.) +  
1000  
t
t
AC(min.) + 2000 +tAC(max.) +  
1000  
ps  
15,17  
,18  
ODT turn-off delay  
ODT turn-off  
tAOFD  
tAOF  
2.5  
2.5  
2.5  
2.5  
tCK  
ps  
t
AC(max.) +  
600  
t
AC(min.)  
tAC(max.) + 600  
2.5 x tCK  
tAC(min.)  
2.5 x tCK  
ODT turn-off (Power-Down  
mode)  
tAOFPD  
AC(min.) + 2000 +tAC(max.) +  
1000  
AC(min.) + 2000 +tAC(max.) +  
1000  
ps  
ODT to Power-Down entry  
latency  
tANPD  
tAXPD  
3
8
-
-
3
8
-
-
tCK  
tCK  
ODT Power-Down exit latency  
Note:  
1. tDAL[nCLK] = WR[nCLK] + tnRP[nCLK] =WR+RU{tRP[ps]/tCK(avg)[ps]}, where WR is the value programmed in the mode  
register set and RU status for round up.  
2. AL: Additive Latency.  
3. MRS A12 bit defines which Active Power-Down Exit timing to be applied.  
4. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the VIH (AC) level for a rising  
signal and VIL (AC) for a falling signal applied to the device under test.  
5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the VIL (DC) level for a rising  
signal and VIH (DC) for a falling signal applied to the device under test.  
6. tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input  
specification parameter. It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH  
calculation is determined by the following equation;  
tHP = Min ( tCH (abs), tCL (abs) ), where:  
t
CH (abs) is the minimum of the actual instantaneous clock HIGH time;  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Aug. 2011  
Revision : 1.1 16/62  
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