Page 46
Epson Research and Development
Vancouver Design Center
Table 6-4: Electrical Characteristics for VDD = 3.3V typical
Symbol
IDDS
IIZ
Parameter
Quiescent Current
Condition
Min
Typ
Max
290
Units
Quiescent Conditions
uA
µA
µA
Input Leakage Current
Output Leakage Current
-1
-1
1
1
IOZ
VDD = min
IOL
=
-2mA (Type1),
-4mA (Type2)
-6mA (Type3)
VOH
High Level Output Voltage
Low Level Output Voltage
VDD - 0.3
V
V
VDD = min
IOL
=
2mA (Type1),
4mA (Type2)
6mA (Type3)
VOL
0.3
VIH
VIL
High Level Input Voltage
Low Level Input Voltage
CMOS level, VDD = max 2.2
CMOS level, VDD = min
V
V
0.8
2.4
CMOS Schmitt,
VDD = 3.3V
VT+
VT-
High Level Input Voltage
Low Level Input Voltage
Hysteresis Voltage
V
V
V
CMOS Schmitt,
0.6
VDD = 3.3V
CMOS Schmitt,
0.1
VH1
VDD = 3.3V
RPD
CI
Pull Down Resistance
VI = VDD
90
180
360
12
kΩ
pF
pF
pF
Input Pin Capacitance
CO
CIO
Output Pin Capacitance
Bi-Directional Pin Capacitance
12
12
S1D13506
X25B-A-001-10
Hardware Functional Specification
Issue Date: 01/02/06
EPSON [ EPSON COMPANY ]
