Epson Research and Development
Page 45
Vancouver Design Center
6 D.C. Characteristics
Table 6-1: Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDD
Supply Voltage
VSS - 0.3 to 6.0
V
DAC VDD
VIN
Supply Voltage
VSS - 0.3 to 6.0
V
Input Voltage
VSS - 0.3 to VDD + 0.5
VSS - 0.3 to VDD + 0.5
-65 to 150
V
VOUT
TSTG
Output Voltage
V
Storage Temperature
Solder Temperature/Time
° C
° C
TSOL
260 for 10 sec. max at lead
Table 6-2: Recommended Operating Conditions
Symbol
Parameter
Supply Voltage
Condition
VSS = 0 V
Min
Typ
Max
Units
VDD
VIN
2.7
3.0/3.3/5.0 5.5
V
Input Voltage
VSS
-40
VDD
85
V
TOPR
Operating Temperature
25
° C
Table 6-3: Electrical Characteristics for VDD = 5.0V typical
Symbol
IDDS
IIZ
Parameter
Quiescent Current
Condition
Min
Typ
Max
Units
uA
Quiescent Conditions
400
1
Input Leakage Current
Output Leakage Current
-1
-1
µA
µA
IOZ
1
VDD = min
IOL
=
-4mA (Type1),
-8mA (Type2)
-12mA (Type3)
VOH
High Level Output Voltage
Low Level Output Voltage
VDD - 0.4
V
V
VDD = min
IOL
=
4mA (Type1),
8mA (Type2)
12mA (Type3)
VOL
0.4
VIH
VIL
High Level Input Voltage
Low Level Input Voltage
CMOS level, VDD = max 3.5
CMOS level, VDD = min
CMOS Schmitt,
V
V
1.0
4.0
VT+
VT-
High Level Input Voltage
Low Level Input Voltage
Hysteresis Voltage
V
V
V
VDD = 5.0V
CMOS Schmitt,
VDD = 5.0V
0.8
CMOS Schmitt,
VDD = 5.0V
VH1
0.3
50
RPD
CI
Pull Down Resistance
VI = VDD
100
200
12
kΩ
pF
pF
pF
Input Pin Capacitance
CO
CIO
Output Pin Capacitance
Bi-Directional Pin Capacitance
12
12
Hardware Functional Specification
Issue Date: 01/02/06
S1D13506
X25B-A-001-10
EPSON [ EPSON COMPANY ]
