EN29LV400A
Table 7. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol
Parameter
Test Conditions
0V≤ V ≤ Vcc
Min
Max
Unit
Typ
Input Leakage Current
Output Leakage Current
Supply Current (read) TTL
±1
±1
14
12
12
µA
µA
I
LI
IN
I
0V≤ V
≤ Vcc
LO
OUT
8
6
7
mA
mA
mA
CE# = V ; OE# = V
IL
;
IH
(read) CMOS Byte
I
I
CC1
f = 5MHz
(read) CMOS Word
CE# = V ,
IH
BYTE# = RESET# =
Vcc ± 0.3V
(Note 1)
CE# = BYTE# =
RESET# = Vcc ± 0.3V
(Note 1)
Supply Current (Standby - TTL)
0.4
1
1.0
mA
µA
CC2
Supply Current (Standby - CMOS)
Supply Current (Program or Erase)
5.0
30
Byte program, Sector or
Chip Erase in progress
15
1
mA
µA
I
I
CC3
CC4
V
= Vcc ± 0.3 V
= Vss ± 0.3 V
IH
5.0
0.8
Automatic Sleep Mode
Input Low Voltage
V
IL
-0.5
V
V
V
V
V
IL
0.7 x
Vcc
Vcc ±
0.3
Input High Voltage
V
IH
Output Low Voltage
Output High Voltage TTL
0.45
V
OL
I
= 4.0 mA
= -2.0 mA
OL
0.85 x
Vcc
Vcc -
0.4V
I
OH
OH
V
OH
Output High Voltage CMOS
V
I
= -100 µA,
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
10.5
2.3
11.5
100
V
V
ID
A9 = VID
µA
I
ID
Supply voltage (Erase and
Program lock-out)
V
LKO
2.5
V
Notes
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that
they draw power if not at full CMOS supply voltages.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2005 Eon Silicon Solution, Inc., www.essi.com.tw
23
Rev. A, Issue Date: 2005/01/07
EON [ EON SILICON SOLUTION INC. ]
