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EN29LV400AB-70TI 参数 Datasheet PDF下载

EN29LV400AB-70TI图片预览
型号: EN29LV400AB-70TI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8位/ 256K ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 41 页 / 378 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV400A  
Flowchart 3. Embedded Erase  
START  
Write Erase  
Command Sequence  
Data Poll from  
System or Toggle Bit  
successfully  
completed  
Data =FFh?  
No  
Yes  
Erase Done  
Flowchart 4. Embedded Erase Command Sequence  
See the Command Definitions section for more information on WORD mode.  
Chip Erase  
555H/AAH  
Sector Erase  
555H/AAH  
2AAH/55H  
555H/80H  
2AAH/55H  
555H/80H  
555H/AAH  
2AAH/55H  
555H/10H  
555H/AAH  
2AAH/55H  
Sector Address/30H  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2005 Eon Silicon Solution, Inc., www.essi.com.tw  
19  
Rev. A, Issue Date: 2005/01/07  
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