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EN29LV400AB-70TI 参数 Datasheet PDF下载

EN29LV400AB-70TI图片预览
型号: EN29LV400AB-70TI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8位/ 256K ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 41 页 / 378 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV400A  
Table 8. AC CHARACTERISTICS  
Read-only Operations Characteristics  
Parameter  
Symbols  
Speed Options  
Test  
Description  
Setup  
JEDEC  
Standard  
-45R -55R  
-70  
-90  
Unit  
Min  
45  
45  
45  
25  
10  
10  
0
55  
55  
55  
30  
15  
15  
0
70  
90  
ns  
Read Cycle Time  
tAVAV  
tRC  
CE# = VIL  
OE#= VIL  
Max  
Max  
Max  
Max  
Max  
Min  
70  
70  
30  
20  
20  
0
90  
90  
35  
20  
20  
0
ns  
ns  
ns  
ns  
ns  
ns  
Address to Output Delay  
tAVQV  
tELQV  
tGLQV  
tEHQZ  
tGHQZ  
tAXQX  
tACC  
tCE  
tOE  
tDF  
Chip Enable To Output Delay  
Output Enable to Output Delay  
Chip Enable to Output High Z  
Output Enable to Output High Z  
OE#= VIL  
tDF  
Output Hold Time from  
Addresses, CE# or OE#,  
whichever occurs first  
tOH  
Notes:  
For -45R,-55R,70 Vcc = 3.0V ± 5%  
Output Load : 1 TTL gate and 30pF  
Input Rise and Fall Times: 5ns  
Input Rise Levels: 0.0 V to Vcc  
Timing Measurement Reference Level, Input and Output: 1.5 V  
For all others:  
Vcc = 3.0V ± 5%  
Output Load: 1 TTL gate and 100 pF  
Input Rise and Fall Times: 5 ns  
Input Pulse Levels: 0.0 V to Vcc  
Timing Measurement Reference Level, Input and Output: 1.5 V  
tRC  
Addresses Stable  
tACC  
Addresses  
CE#  
tDF  
tOE  
OE#  
tOEH  
WE#  
tCE  
tOH  
HIGH Z  
Output Valid  
Outputs  
Reset#  
RY/BY#  
0V  
Figure 5. AC Waveforms for READ Operations  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2005 Eon Silicon Solution, Inc., www.essi.com.tw  
27  
Rev. A, Issue Date: 2005/01/07  
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