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EN29LV400AB-70TI 参数 Datasheet PDF下载

EN29LV400AB-70TI图片预览
型号: EN29LV400AB-70TI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8位/ 256K ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 41 页 / 378 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV400A  
Flowchart 5. DATA# Polling  
Algorithm  
Start  
Read Data  
Yes  
DQ7 = Data?  
No  
No  
DQ5 = 1?  
Yes  
Read Data (1)  
Notes:  
Yes  
(1) This second read is necessary in case the  
first read was done at the exact instant when  
the status data was in transition.  
DQ7 = Data?  
No  
Fail  
Pass  
Start  
Flowchart 6. Toggle Bit Algorithm  
Read Data twice  
No  
DQ6 = Toggle?  
Yes  
No  
DQ5 = 1?  
Yes  
Read Data twice (2)  
Notes:  
No  
(2) This second set of reads is necessary in case  
the first set of reads was done at the exact  
instant when the status data was in transition.  
DQ6 = Toggle?  
Yes  
Fail  
Pass  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2005 Eon Silicon Solution, Inc., www.essi.com.tw  
20  
Rev. A, Issue Date: 2005/01/07  
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