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EN29LV400AB-70TI 参数 Datasheet PDF下载

EN29LV400AB-70TI图片预览
型号: EN29LV400AB-70TI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8位/ 256K ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 41 页 / 378 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV400A  
Flowchart 7a. In-System Sector Protect Flowchart  
START  
PLSCNT = 1  
RESET# = VID  
Wait 1 µs  
No  
First Write  
Cycle =  
60h?  
Temporary Sector  
Unprotect Mode  
Yes  
Set up sector  
address  
Sector Protect: Write 60h  
to sector addr with  
A6 = 0, A1 = 1, A0 = 0  
Wait 150 µs  
Verify Sector Protect:  
Write 40h to sector  
address with  
A6 = 0, A1 = 1, A0 = 0  
Increment  
PLSCNT  
Reset  
PLSCNT = 1  
Wait 0.4 µs  
Read from sector  
address with  
A6 = 0, A1 = 1, A0  
No  
No  
Data = 01h?  
Yes  
PLSCNT = 25?  
Yes  
Device failed  
Yes  
Protect another  
sector?  
No  
Remove VID  
from RESET#  
Write reset  
command  
Sector Protect  
Algorithm  
Sector Protect  
complete  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2005 Eon Silicon Solution, Inc., www.essi.com.tw  
21  
Rev. A, Issue Date: 2005/01/07  
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