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EN29GL064T-70TIP 参数 Datasheet PDF下载

EN29GL064T-70TIP图片预览
型号: EN29GL064T-70TIP
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 8192K ×8位/ 4096K ×16位)闪存 [64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory]
分类和应用: 闪存
文件页数/大小: 66 页 / 3236 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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Preliminary EN29GL064  
Polling on DQ7 is active for approximately 100 µs, then the device returns to the read mode. If not all  
selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and  
ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within  
a protected sector, the status may not be valid.  
Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change  
asynchronously with DQ6-DQ0 while Output Enable (OE#) is asserted low. That is, the device may  
change from providing status information to valid data on DQ7. Depending on when the system samples  
the DQ7 output, it may read the status or valid data. Even if the device has completed the program or  
erase operation and DQ7 has valid data, the data outputs on DQ6-DQ0 may be still invalid. Valid data  
on DQ7-D00 appears on successive read cycles.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.eonssi.com  
26  
Rev. A, Issue Date: 2009/3/20  
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