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EN29GL064T-70TIP 参数 Datasheet PDF下载

EN29GL064T-70TIP图片预览
型号: EN29GL064T-70TIP
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 8192K ×8位/ 4096K ×16位)闪存 [64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory]
分类和应用: 闪存
文件页数/大小: 66 页 / 3236 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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Preliminary EN29GL064  
Sector Erase  
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing  
two un-lock cycles, followed by a set-up command. Two additional unlock write cycles are then followed  
by the address of the sector to be erased, and the sector erase command. The Command Definitions  
table shows the address and data requirements for the sector erase command sequence.  
Once the sector erase operation has begun, only the Sector Erase Suspend command is valid. All other  
commands are ignored. If there are several sectors to be erased, Sector Erase Command sequences  
must be issued for each sector. That is, only a sector address can be specified for each Sector  
Erase command. Users must issue another Sector Erase command for the next sector to be erased  
after the previous one is completed.  
When the Embedded Erase algorithm is completed, the device returns to reading array data and  
addresses are no longer latched. The system can determine the status of the erase operation by using  
DQ7, DQ6, or DQ2. Refer to “Write Operation Status” for information on these status bits. Flowchart 4  
illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the  
“AC Characteristics” section for parameters, and to the Sector Erase Operations Timing diagram for  
timing waveforms.  
Figure 7. Sector Erase Operation  
START  
Write Erase  
Command Sequence  
Data Poll from  
System or Toggle Bit  
successfully  
completed  
Data =FFh?  
No  
Yes  
Erase Done  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.eonssi.com  
23  
Rev. A, Issue Date: 2009/3/20  
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