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EN29GL064T-70TIP 参数 Datasheet PDF下载

EN29GL064T-70TIP图片预览
型号: EN29GL064T-70TIP
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 8192K ×8位/ 4096K ×16位)闪存 [64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory]
分类和应用: 闪存
文件页数/大小: 66 页 / 3236 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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Preliminary EN29GL064  
A “Write-to- Buffer-Abort reset” command sequence is required when using the write buffer  
Programming features in Unlock Bypass mode. Note that the Secured Silicon sector, autoselect, and  
CFI functions are unavailable when a program operation is in progress.  
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash  
devices are capable of handling multiple write buffer programming operations on the same write buffer  
address range without intervening erases.  
Use of the write buffer is strongly recommended for programming when multiple words are to be  
programmed.  
Figure 6. Write Buffer Programming Operation  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.eonssi.com  
22  
Rev. A, Issue Date: 2009/3/20  
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