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EDJ1116BBSE-8A-F 参数 Datasheet PDF下载

EDJ1116BBSE-8A-F图片预览
型号: EDJ1116BBSE-8A-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 151 页 / 1895 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第136页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第137页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第138页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第139页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第141页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第142页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第143页浏览型号EDJ1116BBSE-8A-F的Datasheet PDF文件第144页  
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
CK  
/CK  
ODTLcnw  
WRS4  
Command  
ODTH4  
ODT  
RTT  
ODTLon  
ODTLoff  
tAON (min.)  
tAOF (min.)  
tAOF (max.)  
tADC (min.)  
RTT_Nom  
RTT_WR  
tADC (max.)  
tADC (max.)  
ODTLcwn4  
DQS, /DQS  
DQ  
in  
in  
in  
2
in  
0
1
3
WL  
Dynamic ODT*: Behavior with ODT Pin Being Asserted Together with Write Command  
for a Duration of 6 Clock Cycles, Example for BC4 (via MRS or OTF), AL = 0, CWL = 5.  
Note: ODTH4 is defined from ODT registered high to ODT registered low, so in this example ODTH4 is satisfied;  
ODT registered low at T5 would also be legal.  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
CK  
/CK  
ODTLcnw  
ODTH4  
Command  
ODT  
WRS4  
ODTLon  
ODTLoff  
tAON (min.)  
tAOF (min.)  
tAOF (max.)  
RTT_WR  
RTT  
tADC (max.)  
ODTLcwn4  
DQS, /DQS  
DQ  
in  
0
in  
1
in  
in  
2
3
WL  
Dynamic ODT*: Behavior with ODT Pin Being Asserted Together with Write Command  
for Duration of 4 Clock Cycles  
Note: Example for BC4 (via MRS or OTF), AL = 0, CWL = 5. In this example ODTH4 = 4 is exactly satisfied.  
Data Sheet E1375E50 (Ver. 5.0)  
140  
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