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EDJ1116BBSE-8A-F 参数 Datasheet PDF下载

EDJ1116BBSE-8A-F图片预览
型号: EDJ1116BBSE-8A-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR3 SDRAM [1G bits DDR3 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 151 页 / 1895 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE  
ODT during Reads  
As the DDR3 SDRAM cannot terminate and drive at the same time, RTT must be disabled at least half a clock cycle  
before the read preamble by driving the ODT pin low appropriately. RTT may nominally not be enabled until one  
clock cycle after the end of the post-amble as shown in the example in the figure below.  
Note that ODT may be disabled earlier before the Read and enabled later after the Read than shown in this example  
in the figure below.  
ODT must be disabled externally during Reads by driving ODT low.  
(example: CL = 6; AL = CL - 1 = 5; RL = AL + CL = 11; CWL = 5; ODTLon = CWL + AL -2 = 8;  
ODTLoff = CWL + AL - 2 = 8)  
T0 T1 T2 T3 T4 T5 T6 T7  
T8 T9 T10 T11 T12 T13 T14 T15 T16 End  
CK  
/CK  
READ  
Command  
Address  
A
RL = AL + CL  
ODT  
ODTLoff = WL 2 = CWL + AL 2  
ODTLon = WL 2 = CWL + AL 2  
tAOF (max.)  
tAOF (min.)  
tAON (min.)  
tAON (max.)  
RTT  
RTT  
DRAM_RTT  
DQS, /DQS  
DQ  
out out out out out out out out  
0
1
2
3
4
5
6
7
Example of ODT during Reads  
Data Sheet E1375E50 (Ver. 5.0)  
136  
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