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EDE1108AFBG-8G-F 参数 Datasheet PDF下载

EDE1108AFBG-8G-F图片预览
型号: EDE1108AFBG-8G-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 78 页 / 734 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE1108AFBG  
Notes: 1. For each of the terms above, if not already an integer, round to the next higher integer.  
2. AL: Additive Latency.  
3. MRS A12 bit defines which active power down exit timing to be applied.  
4. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the  
VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test.  
5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the  
VIL(DC) level for a rising signal and VIH(DC) for a falling signal applied to the device under test.  
CK  
DQS  
/CK  
/DQS  
tIS  
tIH  
tIS  
tIH  
tDS tDH  
tDS tDH  
VDDQ  
VDDQ  
VIH (AC)(min.)  
VIH (DC)(min.)  
VREF  
VIH (AC)(min.)  
VIH (DC)(min.)  
VREF  
VIL (DC)(max.)  
VIL (AC)(max.)  
VSS  
VIL (DC)(max.)  
VIL (AC)(max.)  
VSS  
Input Waveform Timing 1 (tDS, tDH)  
Input Waveform Timing 2 (tIS, tIH)  
6.tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not  
an input specification parameter. It is used in conjunction with tQHS to derive the DRAM output timing  
tQH.  
The value to be used for tQH calculation is determined by the following equation;  
tHP = min ( tCH(abs), tCL(abs) ),  
where,  
tCH(abs) is the minimum of the actual instantaneous clock high time;  
tCL(abs) is the minimum of the actual instantaneous clock low time;  
7. tQHS accounts for:  
a. The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the  
input is transferred to the output; and  
b. The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the  
next transition, both of which are independent of each other, due to data pin skew, output pattern effects,  
and p-channel to n-channel variation of the output drivers.  
8. tQH = tHP – tQHS, where:  
tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification  
value under the max column.  
{The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye  
will be.}  
Examples:  
a. If the system provides tHP of 1315ps into a DDR2-667 SDRAM, the DRAM provides tQH of 975ps  
(min.)  
b. If the system provides tHP of 1420ps into a DDR2-667 SDRAM, the DRAM provides tQH of 1080ps  
(min.)  
9. RU stands for round up. WR refers to the tWR parameter stored in the MRS.  
10. When the device is operated with input clock jitter, this parameter needs to be derated by the actual  
tERR(6-10per) of the input clock. (output deratings are relative to the SDRAM input clock.)  
For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per) min. = 272ps and  
tERR(6-10per) max. = +293ps, then tDQSCK min.(derated) = tDQSCK min. tERR(6-10per) max. =  
400ps 293ps = 693ps and tDQSCK max.(derated) = tDQSCK max. tERR(6-10per) min. = 400ps +  
272ps = +672ps. Similarly, tLZ(DQ) for DDR2-667 derates to tLZ(DQ) min.(derated) = 900ps 293ps =  
1193ps and tLZ(DQ) max.(derated)= 450ps + 272ps = +722ps.  
Preliminary Data Sheet E1430E20 (Ver. 2.0)  
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