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EDE1108AFBG-8G-F 参数 Datasheet PDF下载

EDE1108AFBG-8G-F图片预览
型号: EDE1108AFBG-8G-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 78 页 / 734 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE1108AFBG  
11. When the device is operated with input clock jitter, this parameter needs to be derated by the actual  
tJIT(per) of the input clock. (output deratings are relative to the SDRAM input clock.)  
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(per) min. = 72ps and  
tJIT(per) max. = +93ps, then tRPRE min.(derated) = tRPRE min. + tJIT(per) min. = 0.9 × tCK(avg) 72ps  
= +2178ps and tRPRE max.(derated) = tRPRE max. + tJIT(per) max. = 1.1 × tCK(avg) + 93ps = +2843ps.  
12. When the device is operated with input clock jitter, this parameter needs to be derated by the actual  
tJIT(duty) of the input clock. (output deratings are relative to the SDRAM input clock.)  
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(duty) min. = 72ps and  
tJIT(duty) max. = +93ps, then tRPST min.(derated) = tRPST min. + tJIT(duty) min. = 0.4 × tCK(avg) −  
72ps = +928ps and tRPST max.(derated) = tRPST max. + tJIT(duty) max. = 0.6 × tCK(avg) + 93ps =  
+1592ps.  
13. Refer to the Clock Jitter table.  
14. tWTR is at least two clocks (2 × tCK or 2 × nCK) independent of operation frequency.  
Preliminary Data Sheet E1430E20 (Ver. 2.0)  
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