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EDE1108AFBG-8G-F 参数 Datasheet PDF下载

EDE1108AFBG-8G-F图片预览
型号: EDE1108AFBG-8G-F
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 78 页 / 734 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE1108AFBG  
AC Input Test Conditions  
Parameter  
Symbol  
Value  
0.5 × VDDQ  
1.0  
Unit  
V
Notes  
1
Input reference voltage  
VREF  
Input signal maximum peak to peak swing  
Input signal minimum slew rate  
VSWING (max.)  
SLEW  
V
1
1.0  
V/ns  
2, 3  
Notes: 1. Input waveform timing is referenced to the input signal crossing through the VIH/IL (AC) level applied to  
the device under test.  
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH (AC) min. for  
rising edges and the range from VREF to VIL (AC) max. for falling edges as shown in the below figure.  
3. AC timings are referenced with input waveforms switching from VIL (AC) to VIH (AC) on the positive  
transitions and VIH (AC) to VIL (AC) on the negative transitions.  
VDDQ  
VIH (AC)(min.)  
VIH (DC)(min.)  
VSWING(max.)  
VREF  
VIL (DC)(max.)  
VIL (AC)(max.)  
VSS  
TF  
VREF  
TR  
VIL (AC)(max.)  
VIH (AC) min.  
VREF  
Falling slew =  
Rising slew =  
TF  
TR  
AC Input Test Signal Wave forms  
Measurement point  
DQ  
VTT  
RT =25 Ω  
Output Load  
Preliminary Data Sheet E1430E20 (Ver. 2.0)  
19  
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