EDD51323DBH-LS
Advanced Data Retention Current
(TA = −25°C to +85°C, VDD and VDDQ = 1.7V to 1.95V, VSS and VSSQ = 0V)
Parameter
Symbol
typ.
max.
Unit
Condition
Notes
Advanced data retention current
(Self-refresh current)
PASR="000" (Full)
−25°C ≤ TJ ≤ +40°C
CKE = L
IDD6
—
250
µA
PASR="001" (2BK)
PASR="010" (1BK)
PASR="000" (Full)
PASR="001" (2BK)
PASR="010" (1BK)
PASR="000" (Full)
PASR="001" (2BK)
PASR="010" (1BK)
—
—
—
—
—
—
—
—
220
200
420
300
230
500
350
250
µA
µA
µA
µA
µA
µA
µA
µA
IDD6
IDD6
+40°C < TJ ≤ +70°C
CKE = L
+70°C < TJ ≤ +85°C
CKE = L
Notes: 1. IDD specifications are tested after the device is properly initialized.
2. Input slew rate is specified by Test Conditions.
3. Definitions for IDD:
L is defined as VIN ≤ 0.1 × VDDQ;
H is defined as VIN ≥ 0.9 × VDDQ;
STABLE is defined as inputs stable at an H or L level;
SWITCHING is defined as:
Address and command: inputs changing between H and L once per two clock cycles;
Data bus inputs: DQ changing between H and L once per clock cycle; DM and DQS are STABLE.
DC Characteristics 2 (TA = −25°C to +85°C, VDD and VDDQ = 1.7V to 1.95V, VSS and VSSQ = 0V)
Parameter
Symbol
ILI
min.
max.
2.0
Unit
µA
Test condition
Notes
Input leakage current
−2.0
0 ≤ VIN ≤ VDDQ
0 ≤ VOUT ≤ VDDQ,
DQ = disable
Output leakage current
ILO
−1.5
1.5
µA
Output high voltage
Output low voltage
VOH
VOL
0.9 × VDDQ
—
V
V
IOH = − 0.1mA
—
0.1 × VDDQ
IOL = 0.1mA
Pin Capacitance (TA = +25°C, VDD and VDDQ = 1.7V to 1.95V)
Parameter
Symbol
CI1
Pins
min.
2.0
2.0
—
typ.
—
—
—
—
—
—
max.
4.5
Unit
pF
pF
pF
pF
pF
pF
Notes
Input capacitance
CK, /CK
1
CI2
All other input-only pins
CK, /CK
4.5
1
Delta input capacitance
Cdi1
Cdi2
CI/O
Cdio
0.25
1.0
1
All other input-only pins
DQ, DM, DQS
DQ, DM, DQS
—
1
Data input/output capacitance
Delta input/output capacitance
3.5
—
6.0
1, 2
1
1.0
Notes: 1. These parameters are measured on conditions: f = 100MHz, VOUT = VDDQ/2, ∆VOUT = 0.2V,
TA = +25°C.
2. DOUT circuits are disabled.
Preliminary Data Sheet E1432E20 (Ver. 2.0)
7
ELPIDA [ ELPIDA MEMORY ]
